BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 N 100V 0.2A Transistors
- Stock
- 15,000
- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- SOT-23-3
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 100V
- Current Rating :
- 170mA
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 360mW Ta
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 1.7 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 6Ohm
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage :
- 100V
- Threshold Voltage :
- 1.7V
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Height :
- 1.11mm
- Input Capacitance :
- 73pF
- Drain to Source Resistance :
- 1.2Ohm
- Width :
- 1.3mm
- Nominal Vgs :
- 1.7 V
- Continuous Drain Current (ID) :
- 170mA
- Length :
- 2.92mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 100V
- Current :
- 15A
- Dual Supply Voltage :
- 100V
- Turn-Off Delay Time :
- 17 ns
- Base Part Number :
- BSS123
- Voltage - Rated DC :
- 100V
- Fall Time (Typ) :
- 9 ns
- Power Dissipation :
- 360mW
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Published :
- 2003
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Rds On Max :
- 6 Ω
- Max Junction Temperature (Tj) :
- 150°C
- Rise Time :
- 9ns
- Element Configuration :
- Single
- Number of Channels :
- 1
- Datasheets
- BSS123
N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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