BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170MA SOT23-3
- Stock
- 31,754
- In Stock :
- 31,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 6 Ω
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Threshold Voltage :
- 1.7V
- Base Part Number :
- BSS123
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Dual Supply Voltage :
- 100V
- Element Configuration :
- Single
- Current Rating :
- 170mA
- Turn On Delay Time :
- 1.7 ns
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 73pF
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Voltage :
- 100V
- Continuous Drain Current (ID) :
- 170mA
- Number of Channels :
- 1
- Length :
- 2.92mm
- Voltage - Rated DC :
- 100V
- Resistance :
- 6Ohm
- Height :
- 1.11mm
- Current :
- 15A
- Turn-Off Delay Time :
- 17 ns
- Drain to Source Breakdown Voltage :
- 100V
- Drain to Source Resistance :
- 1.2Ohm
- Rise Time :
- 9ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2003
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Drain to Source Voltage (Vdss) :
- 100V
- Width :
- 1.3mm
- Power Dissipation-Max :
- 360mW Ta
- Fall Time (Typ) :
- 9 ns
- Power Dissipation :
- 360mW
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Nominal Vgs :
- 1.7 V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Max Junction Temperature (Tj) :
- 150°C
- Datasheets
- BSS123

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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