BSS119L6433HTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 25V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Terminal Position :

Dual

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Published :

2002

Number of Elements :

1

Drain-source On Resistance-Max :

6Ohm

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

100V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

Feedback Cap-Max (Crss) :

4.1 pF

Drain Current-Max (Abs) (ID) :

0.17A

Operating Mode :

ENHANCEMENT MODE

Series :

SIPMOS®

Power Dissipation-Max :

360mW Ta

Vgs(th) (Max) @ Id :

2.3V @ 50μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

170mA

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

170mA Ta