BSS119NH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.3V @ 13μA

Number of Terminations :

3

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Rise Time :

3.3ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

190mA

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

6Ohm

Rds On (Max) @ Id, Vgs :

6 Ω @ 190mA, 10V

DS Breakdown Voltage-Min :

100V

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

500mW Ta

Drain Current-Max (Abs) (ID) :

0.19A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

20.9pF @ 25V

Mounting Type :

Surface Mount

Contact Plating :

Tin