BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- N-CH MOSFET 100V 0.2A SOT-23-3L
- Stock
- 47,831
- In Stock :
- 47,831
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Single
- Dual Supply Voltage :
- 100V
- Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 1.7 ns
- Rise Time :
- 9ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- SOT-23-3
- Number of Channels :
- 1
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Contact Plating :
- Tin
- Width :
- 1.3mm
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 100V
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Voltage - Rated DC :
- 100V
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.92mm
- Current Rating :
- 170mA
- Resistance :
- 6Ohm
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2003
- Drain to Source Resistance :
- 1.2Ohm
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Base Part Number :
- BSS123
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Current :
- 15A
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 9 ns
- Turn-Off Delay Time :
- 17 ns
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 360mW
- Rds On Max :
- 6 Ω
- Power Dissipation-Max :
- 360mW Ta
- Input Capacitance :
- 73pF
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 100V
- Nominal Vgs :
- 1.7 V
- Radiation Hardening :
- No
- Threshold Voltage :
- 1.7V
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Height :
- 1.11mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 170mA
- Lead Free :
- Lead Free
- Datasheets
- BSS123

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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