BSG0811NDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Package / Case :

8-PowerTDFN

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual) Asymmetrical

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

NO LEAD

Max Power Dissipation :

2.5W

Pulsed Drain Current-Max (IDM) :

160A

Vgs(th) (Max) @ Id :

2V @ 250μA

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

19A 41A

Pbfree Code :

yes

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 4.5V

Continuous Drain Current (ID) :

41A

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 12V

Power - Max :

2.5W

Avalanche Energy Rating (Eas) :

30 mJ

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Published :

2013

Rds On (Max) @ Id, Vgs :

3m Ω @ 20A, 10V

Number of Pins :

8

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-N7

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Case Connection :

SOURCE

Reach Compliance Code :

not_compliant

Factory Lead Time :

26 Weeks

Number of Terminations :

7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate, 4.5V Drive

Series :

OptiMOS™

Drain Current-Max (Abs) (ID) :

19A

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

25V

Drain-source On Resistance-Max :

0.004ohm