BSG0810NDIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

16V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 12V

Power - Max :

2.5W

JESD-30 Code :

R-PDSO-N7

Max Dual Supply Voltage :

25V

Drain-source On Resistance-Max :

0.004ohm

FET Feature :

Logic Level Gate, 4.5V Drive

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

160A

Current - Continuous Drain (Id) @ 25°C :

19A 39A

Drain Current-Max (Abs) (ID) :

19A

Factory Lead Time :

26 Weeks

Mount :

Surface Mount

Number of Terminations :

7

Series :

OptiMOS™

Operating Temperature :

-55°C~155°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

SOURCE

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Published :

2013

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Package / Case :

8-PowerTDFN

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Form :

NO LEAD

FET Type :

2 N-Channel (Dual) Asymmetrical

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 4.5V

Max Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

3m Ω @ 20A, 10V

Continuous Drain Current (ID) :

39A

Avalanche Energy Rating (Eas) :

30 mJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount