BSC0906NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Pbfree Code :

No

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0064Ohm

Number of Terminations :

5

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 15V

Lead Free :

Contains Lead

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

18A Ta 63A Tc

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

14 mJ

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

30V

Pin Count :

8

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

252A

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

63A

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PDSO-F5

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Flat

Number of Elements :

1

Mount :

Surface Mount

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.5W Ta 30W Tc

Vgs (Max) :

±20V

Rise Time :

3.8ns