BSC050N03LSGXT
- Mfr.Part #
- BSC050N03LSGXT
- Manufacturer
- Infineon Technologies
- Package / Case
- TDSON-8
- Datasheet
- Download
- Description
- BSC050N03 - 12V-300V N-CHANNEL P
- Stock
- 178
- In Stock :
- 178
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Brand :
- Infineon Technologies
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 35 nC @ 10 V
- JESD-609 Code :
- e3
- Packaging :
- MouseReel
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PDSO-F8
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Supplier Device Package :
- PG-TDSON-8-5
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.0075 Ω
- HTS Code :
- 8541.29.00.95
- Number of Terminals :
- 8
- DS Breakdown Voltage-Min :
- 30 V
- Height :
- 1.27 mm
- Width :
- 5.15 mm
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30 V
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800 pF @ 15 V
- Mounting Type :
- Surface Mount
- Series :
- OptiMOS™ 3
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- RoHS :
- Details
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 2.5W (Ta), 50W (Tc)
- Avalanche Energy Rating (Eas) :
- 35 mJ
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Package / Case :
- TDSON-8
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Subcategory :
- MOSFETs
- Rds On (Max) @ Id, Vgs :
- 5mOhm @ 30A, 10V
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Terminal Form :
- Flat
- Technology :
- Si
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 18A (Ta), 80A (Tc)
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Package :
- Bulk
- Manufacturer :
- Infineon
- Terminal Finish :
- MATTE TIN
- Length :
- 5.9 mm
- Pin Count :
- 8
- Transistor Application :
- SWITCHING
- Rise Time :
- 4 ns
- Surface Mount :
- yes
- FET Feature :
- -
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Datasheets
- BSC050N03LSGXT
BSC050N03LSGXT Documents

Si N-Channel MouseReel 5mOhm @ 30A, 10V ±20V 2800 pF @ 15 V 35 nC @ 10 V 30 V TDSON-8
BSC050N03LSGXT Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 35 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2800 pF @ 15 V is its maximum input capacitance.Peak drain current is 320 A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30 V.For this transistor to work, a voltage 30 V is required between drain and source (Vdss).
BSC050N03LSGXT Features
the avalanche energy rating (Eas) is 35 mJ
based on its rated peak drain current 320 A.
a 30 V drain to source voltage (Vdss)
BSC050N03LSGXT Applications
There are a lot of Infineon
BSC050N03LSGXT applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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