BSC050N03LSGXT
- Mfr.Part #
- BSC050N03LSGXT
- Manufacturer
- Infineon Technologies
- Package / Case
- TDSON-8
- Datasheet
- Download
- Description
- BSC050N03 - 12V-300V N-CHANNEL P
- Stock
- 178
- In Stock :
- 178
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- Flat
- Power Dissipation (Max) :
- 2.5W (Ta), 50W (Tc)
- Mounting Style :
- SMD/SMT
- Series :
- OptiMOS™ 3
- Packaging :
- MouseReel
- Brand :
- Infineon Technologies
- Length :
- 5.9 mm
- Configuration :
- Single
- Case Connection :
- DRAIN
- Height :
- 1.27 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 35 nC @ 10 V
- Rise Time :
- 4 ns
- Qualification Status :
- Not Qualified
- Terminal Finish :
- MATTE TIN
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Terminal Position :
- Dual
- Drain to Source Voltage (Vdss) :
- 30 V
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.0075 Ω
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- Infineon
- Subcategory :
- MOSFETs
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 30 V
- FET Type :
- N-Channel
- Number of Terminals :
- 8
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 35 mJ
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800 pF @ 15 V
- FET Feature :
- -
- Supplier Device Package :
- PG-TDSON-8-5
- Rds On (Max) @ Id, Vgs :
- 5mOhm @ 30A, 10V
- RoHS :
- Details
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Type :
- 1 N-Channel
- Package :
- Bulk
- Number of Channels :
- 1 Channel
- Current - Continuous Drain (Id) @ 25°C :
- 18A (Ta), 80A (Tc)
- Package Shape :
- RECTANGULAR
- Package / Case :
- TDSON-8
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-F8
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Pin Count :
- 8
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- HTS Code :
- 8541.29.00.95
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Technology :
- Si
- Width :
- 5.15 mm
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Surface Mount :
- yes
- Datasheets
- BSC050N03LSGXT

Si N-Channel MouseReel 5mOhm @ 30A, 10V ±20V 2800 pF @ 15 V 35 nC @ 10 V 30 V TDSON-8
BSC050N03LSGXT Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 35 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2800 pF @ 15 V is its maximum input capacitance.Peak drain current is 320 A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30 V.For this transistor to work, a voltage 30 V is required between drain and source (Vdss).
BSC050N03LSGXT Features
the avalanche energy rating (Eas) is 35 mJ
based on its rated peak drain current 320 A.
a 30 V drain to source voltage (Vdss)
BSC050N03LSGXT Applications
There are a lot of Infineon
BSC050N03LSGXT applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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