BSC0501NSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

30V

Factory Lead Time :

26 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

29A

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0024Ohm

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

400A

FET Feature :

Schottky Diode (Body)

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 15V

Continuous Drain Current (ID) :

100A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Element Material :

SILICON

Series :

OptiMOS™

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Pins :

8

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.5W Ta 50W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 30A, 10V

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Rise Time :

4ns

Pbfree Code :

yes

Terminal Form :

Flat

Avalanche Energy Rating (Eas) :

20 mJ

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

29A Ta 100A Tc

Package / Case :

8-PowerTDFN