BSC040N08NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Threshold Voltage :

3V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta 104W Tc

Rds On (Max) @ Id, Vgs :

4m Ω @ 50A, 10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

80V

Height :

1.1mm

Turn-Off Delay Time :

25 ns

Terminal Position :

Dual

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

80V

Element Configuration :

Single

Package / Case :

8-PowerTDFN

Terminal Form :

Flat

Power Dissipation :

104W

FET Type :

N-Channel

Number of Terminations :

5

Rise Time :

8ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Published :

2013

Number of Channels :

1

Case Connection :

DRAIN

Fall Time (Typ) :

6 ns

Factory Lead Time :

26 Weeks

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.8V @ 67μA

Pulsed Drain Current-Max (IDM) :

400A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Continuous Drain Current (ID) :

100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F5

Mount :

Surface Mount

Number of Elements :

1

Weight :

506.605978mg

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.004ohm

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 40V