BSC034N06NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

400A

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2012

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta 74W Tc

Lead Free :

Contains Lead

Max Dual Supply Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Factory Lead Time :

26 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-F5

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Form :

Flat

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0034Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 30V

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Position :

Dual

Rise Time :

5ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.3V @ 41μA

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 50A, 10V