BSC030N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Position :

Dual

Factory Lead Time :

26 Weeks

Pin Count :

8

Case Connection :

DRAIN

Power Dissipation-Max :

2.5W Ta 69W Tc

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Rise Time :

10ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

16V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

3m Ω @ 30A, 10V

Power Dissipation :

69W

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

OptiMOS™

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

21A

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

21A Ta 100A Tc

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

75 mJ

Pbfree Code :

No

Pulsed Drain Current-Max (IDM) :

400A

Contact Plating :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 15V

Terminal Form :

Flat

JESD-609 Code :

e3

Max Dual Supply Voltage :

30V