BSC028N06NSTATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3W Ta 100W Tc

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Drain-source On Resistance-Max :

0.0028Ohm

Number of Terminations :

5

Surface Mount :

yes

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

100 mJ

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 50A, 10V

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Factory Lead Time :

26 Weeks

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

23A

Input Capacitance (Ciss) (Max) @ Vds :

3375pF @ 30V

Series :

OptiMOS™

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

24A Ta 100A Tc

Pulsed Drain Current-Max (IDM) :

400A

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.3V @ 50μA

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F5