BSC028N06NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

23A

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta 83W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 30V

Published :

2012

Power Dissipation :

83W

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

23A Ta 100A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Flat

Pbfree Code :

No

Vgs(th) (Max) @ Id :

2.8V @ 50μA

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Halogen Free :

Halogen Free

Series :

OptiMOS™

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PDSO-F5

Factory Lead Time :

26 Weeks

Package / Case :

8-PowerTDFN

Fall Time (Typ) :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Max Dual Supply Voltage :

60V

Packaging :

Cut Tape (CT)

Case Connection :

DRAIN

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Rise Time :

38ns

Lead Free :

Contains Lead

Number of Terminations :

5

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

19 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 50A, 10V

Pulsed Drain Current-Max (IDM) :

400A

Number of Pins :

8

Continuous Drain Current (ID) :

100A