BSC028N06LS3GATMA1
- Mfr.Part #
- BSC028N06LS3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 23A/100A TDSON
- Stock
- 816,864
- In Stock :
- 816,864
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 60V
- Halogen Free :
- Halogen Free
- Series :
- OptiMOS™
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 175nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Published :
- 2011
- Terminal Form :
- Flat
- Turn-Off Delay Time :
- 77 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Contains Lead
- Power Dissipation-Max :
- 2.5W Ta 139W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 23A
- Number of Pins :
- 8
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-PowerTDFN
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 13000pF @ 30V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Pin Count :
- 8
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 2.8m Ω @ 50A, 10V
- Pbfree Code :
- No
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 26 Weeks
- JESD-30 Code :
- R-PDSO-F5
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 19 ns
- Pulsed Drain Current-Max (IDM) :
- 400A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 2.2V @ 93µA
- Drain to Source Breakdown Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.5W
- Rise Time :
- 17ns
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta 100A Tc
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Height :
- 1.1mm
- Number of Channels :
- 1
- Datasheets
- BSC028N06LS3GATMA1

N-Channel Tape & Reel (TR) 2.8m Ω @ 50A, 10V ±20V 13000pF @ 30V 175nC @ 10V 8-PowerTDFN
Description
The 60V N-channel Power MOSFET BSC028N06LS3GATMA1 is designed for synchronous rectification in switched-mode power supplies (SMPS), which are used in devices including servers, desktop computers, and tablet chargers. Compared to competing devices, the MOSFET has a 40% reduced RDS (on). High system efficiency and power density are made possible by the significantly decreased gate and output charges. In high-frequency switching and DC-DC converters, the OptiMOSTM power MOSFET excels.
Features
-
Highest system efficiency
-
Less paralleling required
-
Increased power density
-
Saving space
-
Very low voltage overshoot
-
Superior thermal resistance
-
Ideal for high frequency switching and sync. rec.
-
Optimized technology for DC/DC converters
-
Excellent gate charge x RDS(on) product (FOM)
-
Very low on-resistance RDS(on)
-
Superior thermal resistance
-
N-channel, logic level
-
100% avalanche tested
-
Pb-free plating; RoHS compliant
-
Qualified according to JEDEC for target applications
-
Halogen-free according to IEC61249-2-21
Applications
-
Power Management
-
Alternative Energy
-
Motor Drive & Control
-
Industrial
-
Small motor control
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