BSC028N06LS3GATMA1

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Mfr.Part #
BSC028N06LS3GATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 60V 23A/100A TDSON
Stock
816,864
In Stock :
816,864

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Max Dual Supply Voltage :
60V
Halogen Free :
Halogen Free
Series :
OptiMOS™
Number of Terminations :
5
Gate Charge (Qg) (Max) @ Vgs :
175nC @ 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Published :
2011
Terminal Form :
Flat
Turn-Off Delay Time :
77 ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Lead Free :
Contains Lead
Power Dissipation-Max :
2.5W Ta 139W Tc
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
LOGIC LEVEL COMPATIBLE
JESD-609 Code :
e3
Continuous Drain Current (ID) :
23A
Number of Pins :
8
Max Junction Temperature (Tj) :
150°C
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Package / Case :
8-PowerTDFN
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
13000pF @ 30V
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Pin Count :
8
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
2.8m Ω @ 50A, 10V
Pbfree Code :
No
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
26 Weeks
JESD-30 Code :
R-PDSO-F5
Case Connection :
DRAIN
Turn On Delay Time :
19 ns
Pulsed Drain Current-Max (IDM) :
400A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Vgs(th) (Max) @ Id :
2.2V @ 93µA
Drain to Source Breakdown Voltage :
60V
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
2.5W
Rise Time :
17ns
Current - Continuous Drain (Id) @ 25°C :
23A Ta 100A Tc
Mounting Type :
Surface Mount
Mount :
Surface Mount
Number of Elements :
1
Height :
1.1mm
Number of Channels :
1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC028N06LS3GATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Number of Pins:8, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Channels:1, BSC028N06LS3GATMA1 pinout, BSC028N06LS3GATMA1 datasheet PDF, BSC028N06LS3GATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC028N06LS3GATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC028N06LS3GATMA1


N-Channel Tape & Reel (TR) 2.8m Ω @ 50A, 10V ±20V 13000pF @ 30V 175nC @ 10V 8-PowerTDFN

Description


The 60V N-channel Power MOSFET BSC028N06LS3GATMA1 is designed for synchronous rectification in switched-mode power supplies (SMPS), which are used in devices including servers, desktop computers, and tablet chargers. Compared to competing devices, the MOSFET has a 40% reduced RDS (on). High system efficiency and power density are made possible by the significantly decreased gate and output charges. In high-frequency switching and DC-DC converters, the OptiMOSTM power MOSFET excels.



Features


  • Highest system efficiency

  • Less paralleling required

  • Increased power density

  • Saving space

  • Very low voltage overshoot

  • Superior thermal resistance

  • Ideal for high frequency switching and sync. rec.

  • Optimized technology for DC/DC converters

  • Excellent gate charge x RDS(on) product (FOM)

  • Very low on-resistance RDS(on)

  • Superior thermal resistance

  • N-channel, logic level

  • 100% avalanche tested

  • Pb-free plating; RoHS compliant

  • Qualified according to JEDEC for target applications

  • Halogen-free according to IEC61249-2-21



Applications


  • Power Management

  • Alternative Energy

  • Motor Drive & Control

  • Industrial

  • Small motor control


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