BSC026NE2LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Number of Elements :

1

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

25V

Pbfree Code :

yes

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Vgs (Max) :

±16V

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 30A, 10V

Power Dissipation-Max :

2.5W Ta 29W Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Package / Case :

8-PowerTDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

24A Ta 82A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

14 mJ

Terminal Form :

Flat

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.004ohm

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 12V

Number of Terminations :

5

Series :

OptiMOS™

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

82A

Drain Current-Max (Abs) (ID) :

24A

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V