BSC024NE2LSATMA1

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Mfr.Part #
BSC024NE2LSATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 25A/110A TDSON
Stock
9,983
In Stock :
9,983

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2011
Transistor Element Material :
SILICON
Terminal Form :
Flat
Packaging :
Tape and Reel (TR)
Lead Free :
Contains Lead
Continuous Drain Current (ID) :
25A
Number of Elements :
1
Halogen Free :
Halogen Free
REACH SVHC :
No SVHC
Terminal Position :
Dual
Transistor Application :
SWITCHING
Reach Compliance Code :
not_compliant
Pulsed Drain Current-Max (IDM) :
400A
Mounting Type :
Surface Mount
Max Dual Supply Voltage :
25V
Threshold Voltage :
2V
Turn On Delay Time :
4.1 ns
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 30A, 10V
Rise Time :
3.6ns
Number of Pins :
8
ECCN Code :
EAR99
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Number of Terminations :
5
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
8-PowerTDFN
Factory Lead Time :
26 Weeks
Power Dissipation-Max :
2.5W Ta 48W Tc
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
25A Ta 100A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
2V @ 250μA
Avalanche Energy Rating (Eas) :
40 mJ
Drain-source On Resistance-Max :
0.0034Ohm
Series :
OptiMOS™
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 12V
Operating Temperature :
-55°C~150°C TJ
Pin Count :
8
Vgs (Max) :
±20V
JESD-30 Code :
R-PDSO-F5
Pbfree Code :
No
Terminal Finish :
Tin (Sn)
Mount :
Surface Mount
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Turn-Off Delay Time :
19 ns
Fall Time (Typ) :
2.6 ns
Qualification Status :
Not Qualified
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BSC024NE2LSATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC024NE2LSATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:5, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, BSC024NE2LSATMA1 pinout, BSC024NE2LSATMA1 datasheet PDF, BSC024NE2LSATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC024NE2LSATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC024NE2LSATMA1


N-Channel Tape & Reel (TR) 2.4m Ω @ 30A, 10V ±20V 1700pF @ 12V 23nC @ 10V 8-PowerTDFN

BSC024NE2LSATMA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 40 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1700pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 25A amps.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 4.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 25V, it can support the maximum dual supply voltage.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

BSC024NE2LSATMA1 Features


the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 19 ns
based on its rated peak drain current 400A.
a threshold voltage of 2V


BSC024NE2LSATMA1 Applications


There are a lot of Infineon Technologies
BSC024NE2LSATMA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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