BSC016N06NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

30A Ta 100A Tc

Turn On Delay Time :

19 ns

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

400A

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 30V

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

Turn-Off Delay Time :

35 ns

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Pin Count :

8

Height :

1.1mm

Halogen Free :

Halogen Free

Pbfree Code :

No

FET Type :

N-Channel

Number of Terminations :

3

Max Dual Supply Voltage :

60V

Series :

OptiMOS™

Transistor Element Material :

SILICON

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

Mount :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 50A, 10V

REACH SVHC :

No SVHC

Rise Time :

9ns

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

30A

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2.8V @ 95μA

Power Dissipation-Max :

2.5W Ta 139W Tc

Number of Pins :

8

JESD-609 Code :

e3

Published :

2012

Number of Channels :

1

Package / Case :

8-PowerTDFN

Transistor Application :

SWITCHING

Fall Time (Typ) :

9 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F3

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Factory Lead Time :

13 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V