BSC014N04LSTATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0019Ohm

Series :

OptiMOS™

Power Dissipation-Max :

3W Ta 115W Tc

Transistor Element Material :

SILICON

Terminal Form :

Flat

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Factory Lead Time :

26 Weeks

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 50A, 10V

Vgs (Max) :

±20V

Number of Elements :

1

JESD-30 Code :

R-PDSO-F3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

170 mJ

Drain Current-Max (Abs) (ID) :

32A

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6020pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

33A Ta 100A Tc

DS Breakdown Voltage-Min :

40V

Terminal Position :

Dual

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Additional Feature :

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

400A