BSC014N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Number of Pins :

8

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

55 ns

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Terminal Form :

Flat

Avalanche Energy Rating (Eas) :

170 mJ

Additional Feature :

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

11 ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 50A, 10V

Pin Count :

8

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Lead Free :

Contains Lead

Power Dissipation-Max :

2.5W Ta 96W Tc

Gate to Source Voltage (Vgs) :

20V

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

40V

Pbfree Code :

No

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0019Ohm

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Packaging :

Cut Tape (CT)

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

32A Ta 100A Tc

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rise Time :

56ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Factory Lead Time :

39 Weeks

JESD-30 Code :

R-PDSO-F3

Continuous Drain Current (ID) :

32A

Vgs (Max) :

±20V

Turn On Delay Time :

16 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Pulsed Drain Current-Max (IDM) :

400A