BSC014N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

30A Ta 100A Tc

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

340 mJ

Terminal Form :

Flat

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 30A, 10V

Mount :

Surface Mount

Number of Elements :

1

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Series :

OptiMOS™

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

2.5W Ta 139W Tc

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

30V

Turn-Off Delay Time :

43 ns

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Number of Pins :

8

Rise Time :

16ns

Published :

2010

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

400A

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

ECCN Code :

EAR99

Turn On Delay Time :

32 ns

Continuous Drain Current (ID) :

30A

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 15V