BLT50,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Collector-Base Capacitance-Max :

6pF

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Operating Temperature :

175°C TJ

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 300mA 5V

Number of Terminations :

4

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

2W

Power Gain-Min (Gp) :

10dB

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

HTS Code :

8541.29.00.75

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

500mA

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Power - Max :

2W

Terminal Position :

Dual

Surface Mount :

yes

Base Part Number :

BLT50

Published :

1998

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Matte Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

10V

Transistor Application :

AMPLIFIER

Frequency - Transition :

470MHz

Terminal Form :

Gull wing

Power Dissipation Ambient-Max :

2W

Packaging :

Tape and Reel (TR)

Package / Case :

TO-261-4, TO-261AA