BIDW50N65T

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - IGBTs - Single

Switching Energy :

3mJ (on), 1.1mJ (off)

Current - Collector Pulsed (Icm) :

150 A

Power - Max :

416 W

Base Product Number :

BIDW50N

Mounting Style :

Through Hole

Input Type :

Standard

Configuration :

Single Diode

Supplier Device Package :

TO-247

Product Status :

Active

Packaging :

Tube

Product Category :

IGBT Transistors

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 50A

Product Type :

IGBT Transistors

Td (on/off) @ 25°C :

37ns/125ns

Gate Charge :

123 nC

Package / Case :

TO-247-3

Minimum Operating Temperature :

- 55 C

Reverse Recovery Time (trr) :

37.5 ns

Voltage - Collector Emitter Breakdown (Max) :

650 V

Series :

-

Maximum Operating Temperature :

+ 150 C

Subcategory :

IGBTs

Brand :

Bourns

Package :

Tube

RoHS :

Details

Operating Temperature :

-55°C ~ 150°C (TJ)

Technology :

Si

Package Type :

TO-247

Manufacturer :

Bourns

Test Condition :

400V, 50A, 10Ohm, 15V

IGBT Type :

Trench Field Stop

Current - Collector (Ic) (Max) :

100 A