BFS25A,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Qualification Status :

Not Qualified

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Highest Frequency Band :

L B

Collector-Base Capacitance-Max :

0.45pF

JESD-30 Code :

R-PDSO-G3

Packaging :

Tape and Reel (TR)

Frequency - Transition :

5GHz

Current - Collector (Ic) (Max) :

6.5mA

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500μA 1V

Terminal Position :

Dual

Package / Case :

SC-70, SOT-323

RoHS Status :

ROHS3 Compliant

Operating Temperature :

175°C TJ

Base Part Number :

BFS25

Power Dissipation Ambient-Max :

0.032W

HTS Code :

8541.21.00.75

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.032W

Factory Lead Time :

13 Weeks

Transistor Type :

NPN

Number of Elements :

1

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.8dB ~ 2dB @ 1GHz

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Published :

1997

Voltage - Collector Emitter Breakdown (Max) :

5V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

5000MHz

Power - Max :

32mW

Number of Terminations :

3

Terminal Form :

Gull wing

Pin Count :

3