BFS 481 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

8GHz

Peak Reflow Temperature (Cel) :

260

Configuration :

SEPARATE, 2 ELEMENTS

Voltage - Collector Emitter Breakdown (Max) :

12V

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Collector-Base Capacitance-Max :

0.4pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

20mA

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Power - Max :

175mW

Transistor Element Material :

SILICON

Transistor Type :

2 NPN (Dual)

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 8V

Qualification Status :

Not Qualified

Surface Mount :

yes

Base Part Number :

BFS481

Terminal Finish :

MATTE TIN

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Number of Terminations :

6

Published :

2011

Package / Case :

6-VSSOP, SC-88, SOT-363

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Gain :

20dB

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Transition Frequency :

8000MHz

JESD-30 Code :

R-PDSO-G6

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER