BFR 183W E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminations :

3

Number of Elements :

1

Gain :

18.5dB

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Power Dissipation-Max (Abs) :

0.45W

Package / Case :

SC-70, SOT-323

Frequency - Transition :

8GHz

Power - Max :

450mW

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

Voltage - Collector Emitter Breakdown (Max) :

12V

Surface Mount :

yes

Collector-Base Capacitance-Max :

0.7pF

Transition Frequency :

8000MHz

JESD-30 Code :

R-PDSO-G3

Terminal Position :

Dual

Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Base Part Number :

BFR183

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

65mA

Transistor Element Material :

SILICON

Highest Frequency Band :

ULTRA HIGH FREQUENCY B