BFP 640FESD E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-30 Code :

R-PDSO-F4

Transition Frequency :

46000MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Frequency - Transition :

46GHz

Voltage - Collector Emitter Breakdown (Max) :

4.7V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

50mA

Base Part Number :

BFP640

Highest Frequency Band :

X B

Package / Case :

4-SMD, Flat Leads

Transistor Element Material :

SILICON GERMANIUM CARBON

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Operating Temperature (Max) :

150°C

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

Gain :

8B ~ 30.5dB

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Configuration :

Single

Reach Compliance Code :

Compliant

Operating Temperature (Min) :

150°C

Number of Elements :

1

Mounting Type :

Surface Mount

Power - Max :

200mW

Terminal Position :

Dual