BFG94,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

6GHz

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

60mA

Noise Figure (dB Typ @ f) :

2.7dB ~ 3dB @ 500MHz ~ 1GHz

Configuration :

Single

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

Collector-Base Capacitance-Max :

2pF

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 30mA 5V

Power Dissipation Ambient-Max :

0.7W

Reference Standard :

CECC

Transition Frequency :

6000MHz

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Power Dissipation-Max (Abs) :

0.7W

Transistor Application :

AMPLIFIER

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Terminal Position :

Dual

Base Part Number :

BFG94

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

HTS Code :

8541.21.00.75

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Number of Terminations :

4

Additional Feature :

High Reliability

Operating Temperature :

175°C TJ

Published :

1997

Package / Case :

TO-261-4, TO-261AA

Power - Max :

700mW