BFG94,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Reference Standard :

CECC

Power Dissipation Ambient-Max :

0.7W

Additional Feature :

High Reliability

Number of Elements :

1

Operating Temperature :

175°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Collector-Base Capacitance-Max :

2pF

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 30mA 5V

HTS Code :

8541.21.00.75

Pin Count :

4

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JESD-609 Code :

e3

Configuration :

Single

Noise Figure (dB Typ @ f) :

2.7dB ~ 3dB @ 500MHz ~ 1GHz

Package / Case :

TO-261-4, TO-261AA

Base Part Number :

BFG94

Current - Collector (Ic) (Max) :

60mA

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Voltage - Collector Emitter Breakdown (Max) :

12V

Frequency - Transition :

6GHz

Power - Max :

700mW

Surface Mount :

yes

Number of Terminations :

4

Power Dissipation-Max (Abs) :

0.7W

Transistor Application :

AMPLIFIER

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-30 Code :

R-PDSO-G4

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Transition Frequency :

6000MHz

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Published :

1997

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260