BFG67/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

175°C TJ

Transistor Type :

NPN

Published :

1998

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pin Count :

4

Power - Max :

380mW

Highest Frequency Band :

L B

Terminal Position :

Dual

Transistor Element Material :

SILICON

Number of Terminations :

4

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Voltage - Collector Emitter Breakdown (Max) :

10V

JESD-30 Code :

R-PDSO-G4

Transition Frequency :

8000MHz

Frequency - Transition :

8GHz

Base Part Number :

BFG67

Power Dissipation Ambient-Max :

0.3W

Power Dissipation-Max (Abs) :

0.3W

Qualification Status :

Not Qualified

Surface Mount :

yes

Additional Feature :

High Reliability

Reference Standard :

CECC

ECCN Code :

EAR99

Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Current - Collector (Ic) (Max) :

50mA

Number of Elements :

1

Terminal Form :

Gull wing

Factory Lead Time :

53 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 5V

Package / Case :

TO-253-4, TO-253AA

Noise Figure (dB Typ @ f) :

1.3dB @ 1GHz

Polarity/Channel Type :

NPN

HTS Code :

8541.21.00.75