BFG67/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Qualification Status :

Not Qualified

Case Connection :

COLLECTOR

Highest Frequency Band :

L B

Frequency - Transition :

8GHz

Number of Terminations :

4

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G4

Transition Frequency :

8000MHz

Polarity/Channel Type :

NPN

Noise Figure (dB Typ @ f) :

1.3dB @ 1GHz

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

50mA

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

BFG67

Transistor Application :

AMPLIFIER

Number of Elements :

1

Operating Temperature :

175°C TJ

Terminal Position :

Dual

Power Dissipation Ambient-Max :

0.3W

Pin Count :

4

ECCN Code :

EAR99

Factory Lead Time :

53 Weeks

Surface Mount :

yes

Published :

1998

Reference Standard :

CECC

Peak Reflow Temperature (Cel) :

260

Voltage - Collector Emitter Breakdown (Max) :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 5V

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

0.3W

HTS Code :

8541.21.00.75

JESD-609 Code :

e3

Power - Max :

380mW

Configuration :

Single

Packaging :

Tape and Reel (TR)

Package / Case :

TO-253-4, TO-253AA

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant