BFG424W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-30 Code :

R-PDSO-F4

Current - Collector (Ic) (Max) :

30mA

Power - Max :

135mW

Highest Frequency Band :

L B

Gain :

22dB

Operating Temperature :

150°C TJ

Package / Case :

SC-82A, SOT-343

Published :

2005

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

25000MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 2V

JESD-609 Code :

e3

Number of Elements :

1

HTS Code :

8541.21.00.75

Terminal Position :

Dual

Number of Terminations :

4

Terminal Form :

Flat

Transistor Type :

NPN

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Additional Feature :

LOW NOISE

Frequency - Transition :

25GHz

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Base Part Number :

BFG424

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Pin Count :

4

Power Dissipation-Max (Abs) :

0.135W

Configuration :

Single