BF959RL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

3dB @ 200MHz

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Voltage - Rated DC :

20V

Number of Elements :

1

Lead Free :

Lead Free

Element Configuration :

Single

HTS Code :

8541.21.00.75

Collector Emitter Breakdown Voltage :

20V

Reach Compliance Code :

Unknown

Collector Emitter Voltage (VCEO) :

20V

Max Power Dissipation :

625mW

Emitter Base Voltage (VEBO) :

3V

Collector Base Voltage (VCBO) :

30V

Collector Emitter Saturation Voltage :

1V

Number of Pins :

3

Polarity/Channel Type :

NPN

Additional Feature :

EUROPEAN PART NUMBER

Pbfree Code :

yes

Transition Frequency :

700MHz

Mount :

Through Hole

Max Collector Current :

100mA

Highest Frequency Band :

VERY HIGH FREQUENCY B

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Transistor Application :

AMPLIFIER

Base Part Number :

BF959

Pin Count :

3

Current Rating :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA 10V

RoHS Status :

RoHS Compliant

Published :

2005

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

hFE Min :

35

Qualification Status :

Not Qualified

Gain Bandwidth Product :

700MHz