BF823,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Form :

Gull wing

ECCN Code :

EAR99

VCEsat-Max :

0.8 V

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

250V

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

250V

Factory Lead Time :

4 Weeks

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

5V

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

800mV @ 5mA, 30mA

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Series :

Automotive, AEC-Q101

Max Collector Current :

50mA

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

250V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 20V

Base Part Number :

BF823

Transistor Element Material :

SILICON

Transistor Type :

PNP

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Power Dissipation :

250mW

Max Power Dissipation :

250mW

Pin Count :

3

Max Breakdown Voltage :

250V

Number of Elements :

1

Frequency :

60MHz

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

60MHz

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

10nA ICBO

Transition Frequency :

60MHz

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Published :

2009