BF820W,115
- Mfr.Part #
- BF820W,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.05A SOT323
- Stock
- 644
- In Stock :
- 644
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 60MHz
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 300V
- Max Breakdown Voltage :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- Gain Bandwidth Product :
- 60MHz
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Package / Case :
- SC-70, SOT-323
- Pin Count :
- 3
- VCEsat-Max :
- 0.6 V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BF820
- Frequency :
- 60MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 50mA
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Datasheets
- BF820W,115

NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BF820W,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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