BF824,215
- Mfr.Part #
- BF824,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.025A TO236AB
- Stock
- 4,908
- In Stock :
- 4,908
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4V
- Frequency :
- 450MHz
- Max Collector Current :
- 25mA
- Base Part Number :
- BF824
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 25
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 4mA 10V
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 450MHz
- Max Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 450MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 30V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 30V
- Power Dissipation :
- 250mW
- Published :
- 2009
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Datasheets
- BF824,215

PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BF824,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 4mA 10V DC current gain.Keeping the emitter base voltage at 4V can result in a high level of efficiency.There is a transition frequency of 450MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 25mA volts.
BF824,215 Features
the DC current gain for this device is 25 @ 4mA 10V
the emitter base voltage is kept at 4V
a transition frequency of 450MHz
BF824,215 Applications
There are a lot of Nexperia USA Inc.
BF824,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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