BF820W,115
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- Mfr.Part #
- BF820W,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 50MA SOT323
- Stock
- 644
- In Stock ：
- 644
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 50mA
- Number of Elements :
- 1
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 300V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 60MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Frequency :
- 60MHz
- Base Part Number :
- BF820
- Contact Plating :
- Tin
- VCEsat-Max :
- 0.6 V
- Number of Terminations :
- 3
- Transition Frequency :
- 60MHz
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Datasheets
- BF820W,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BF820W,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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