BF799E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

Terminal Position :

Dual

Noise Figure (dB Typ @ f) :

3dB @ 100MHz

Voltage - Collector Emitter Breakdown (Max) :

20V

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Transition Frequency :

1100MHz

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

35mA

Power Dissipation-Max (Abs) :

0.28W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA 10V

Surface Mount :

yes

Base Part Number :

BF799

Number of Elements :

1

Power - Max :

280mW

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

RoHS Status :

RoHS Compliant

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Terminations :

3

Mounting Type :

Surface Mount

Reach Compliance Code :

Compliant

Frequency - Transition :

800MHz

Terminal Form :

Gull wing