BF 775 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

5GHz

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V

Transition Frequency :

5000MHz

Collector-Base Capacitance-Max :

0.6pF

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Transistor Type :

NPN

Configuration :

Single

Published :

2007

Power - Max :

280mW

Transistor Element Material :

SILICON

Gain :

10.5dB ~ 16dB

Noise Figure (dB Typ @ f) :

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Number of Elements :

1

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

45mA

Number of Terminations :

3

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Operating Temperature :

150°C TJ

JESD-609 Code :

e3