BDW83C

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Mfr.Part #
BDW83C
Manufacturer
Central Semiconductor
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN 100V 15A TO218
Stock
6,117
In Stock :
6,117

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 6A 3V
Max Power Dissipation :
130W
REACH SVHC :
No SVHC
Element Configuration :
Single
Base Part Number :
BDW83
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
Collector Emitter Saturation Voltage :
2.5V
Power Dissipation :
130W
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
150°C TJ
Width :
5.15mm
Radiation Hardening :
No
VCEsat-Max :
4 V
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN - Darlington
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
100V
Length :
15.75mm
Collector Base Voltage (VCBO) :
100V
Current - Collector Cutoff (Max) :
1mA
Number of Pins :
3
Package / Case :
TO-247-3
Transistor Application :
SWITCHING
Pbfree Code :
yes
Lead Free :
Lead Free
Weight :
90.718474g
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Polarity :
NPN
Transistor Element Material :
SILICON
Contact Plating :
Tin
ECCN Code :
EAR99
Max Collector Current :
15A
hFE Min :
100
Number of Terminations :
3
Current Rating :
15A
Height :
20.15mm
Packaging :
Tube
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
100V
JESD-609 Code :
e3
Voltage - Rated DC :
100V
Pin Count :
3
Datasheets
BDW83C
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor BDW83C from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BDW83, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, BDW83C pinout, BDW83C datasheet PDF, BDW83C amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor BDW83C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

BDW83C Overview


This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.The maximum collector current is 15A volts.

BDW83C Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A


BDW83C Applications


There are a lot of STMicroelectronics
BDW83C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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