BDW83C

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Mfr.Part #
BDW83C
Manufacturer
Central Semiconductor
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN 100V 15A TO218
Stock
6,117
In Stock :
6,117

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
Pbfree Code :
yes
Voltage - Rated DC :
100V
Length :
15.75mm
Max Power Dissipation :
130W
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
100V
Collector Emitter Breakdown Voltage :
100V
Packaging :
Tube
Power Dissipation :
130W
Operating Temperature :
150°C TJ
VCEsat-Max :
4 V
Pin Count :
3
Current - Collector Cutoff (Max) :
1mA
Transistor Application :
SWITCHING
Radiation Hardening :
No
Base Part Number :
BDW83
Collector Emitter Saturation Voltage :
2.5V
Width :
5.15mm
Number of Terminations :
3
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
90.718474g
Collector Base Voltage (VCBO) :
100V
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 6A 3V
Transistor Type :
NPN - Darlington
Element Configuration :
Single
Current Rating :
15A
Polarity :
NPN
Contact Plating :
Tin
JESD-609 Code :
e3
Mounting Type :
Through Hole
Lead Free :
Lead Free
Max Collector Current :
15A
Emitter Base Voltage (VEBO) :
5V
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Mount :
Through Hole
hFE Min :
100
ECCN Code :
EAR99
Height :
20.15mm
RoHS Status :
ROHS3 Compliant
Datasheets
BDW83C
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor BDW83C from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:BDW83, Number of Terminations:3, Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, BDW83C pinout, BDW83C datasheet PDF, BDW83C amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor BDW83C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

BDW83C Overview


This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.The maximum collector current is 15A volts.

BDW83C Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A


BDW83C Applications


There are a lot of STMicroelectronics
BDW83C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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