BDW83B
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- Mfr.Part #
- BDW83B
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 15A TO218
- Stock
- 20,498
- In Stock ：
- 20,498
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Operating Temperature (Max) :
- 150°C
- Configuration :
- Darlington
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-218-3
- Max Power Dissipation :
- 130W
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 6A 3V
- Packaging :
- Bulk
- Pbfree Code :
- No
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- HTS Code :
- 8541.29.00.95
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Max Collector Current :
- 15A
- Current - Collector (Ic) (Max) :
- 15A
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- BDW83B
NPN 1 Elements 3 Terminations SILICON NPN TO-218-3 Bulk Through Hole
BDW83B Overview
In this device, the DC current gain is 750 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Maximum collector currents can be below 15A volts.
BDW83B Features
the DC current gain for this device is 750 @ 6A 3V
BDW83B Applications
There are a lot of Central Semiconductor Corp
BDW83B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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