BDW83B
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- Mfr.Part #
- BDW83B
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 15A TO218
- Stock
- 20,498
- In Stock ：
- 20,498
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Darlington
- Terminal Position :
- Single
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 6A 3V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- JESD-609 Code :
- e0
- Package / Case :
- TO-218-3
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Reach Compliance Code :
- not_compliant
- Operating Temperature (Max) :
- 150°C
- Max Collector Current :
- 15A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- No
- HTS Code :
- 8541.29.00.95
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Current - Collector (Ic) (Max) :
- 15A
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 130W
- Datasheets
- BDW83B
BDW83B Documents
NPN 1 Elements 3 Terminations SILICON NPN TO-218-3 Bulk Through Hole
BDW83B Overview
In this device, the DC current gain is 750 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Maximum collector currents can be below 15A volts.
BDW83B Features
the DC current gain for this device is 750 @ 6A 3V
BDW83B Applications
There are a lot of Central Semiconductor Corp
BDW83B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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