BDW83A
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- Mfr.Part #
- BDW83A
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO218
- Stock
- 27,991
- In Stock ：
- 27,991
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 4V
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 3.5W
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- -65°C~150°C TJ
- Power - Max :
- 3.5W
- Packaging :
- Tube
- Max Collector Current :
- 15A
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Polarity :
- NPN
- Terminal Position :
- Single
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 6A 3V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 2.5V
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 150mA, 15A
- Current - Collector Cutoff (Max) :
- 1mA
- Published :
- 2011
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-218-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BDW83
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Datasheets
- BDW83A
BDW83A Documents
NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-218-3 Tube Through Hole
BDW83A-S Overview
DC current gain in this device equals 750 @ 6A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 150mA, 15A.An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 15A volts.
BDW83A-S Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
BDW83A-S Applications
There are a lot of Bourns Inc.
BDW83A-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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