BDW83B-S

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Mfr.Part #
BDW83B-S
Manufacturer
Bourns, Inc.
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS NPN DARL 80V 15A SOT93
Stock
2,878
In Stock :
2,878

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Through Hole
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
1mA
Package / Case :
TO-218-3
Base Part Number :
BDW83
Terminal Position :
Single
Collector Emitter Voltage (VCEO) :
4V
Transistor Application :
SWITCHING
Number of Pins :
3
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Published :
2011
Max Power Dissipation :
3.5W
Polarity :
NPN
Pin Count :
3
Collector Emitter Saturation Voltage :
2.5V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Collector Current :
15A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 6A 3V
Operating Temperature :
-65°C~150°C TJ
Number of Elements :
1
ECCN Code :
EAR99
Power - Max :
3.5W
Number of Terminations :
3
JESD-609 Code :
e1
Terminal Finish :
TIN SILVER COPPER
Collector Emitter Breakdown Voltage :
80V
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Collector Base Voltage (VCBO) :
80V
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN - Darlington
RoHS Status :
ROHS3 Compliant
Datasheets
BDW83B-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW83B-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-218-3, Base Part Number:BDW83, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, BDW83B-S pinout, BDW83B-S datasheet PDF, BDW83B-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW83B-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW83B-S


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-218-3 Tube Through Hole

BDW83B-S Overview


DC current gain in this device equals 750 @ 6A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 150mA, 15A.An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 15A volts.

BDW83B-S Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V


BDW83B-S Applications


There are a lot of Bourns Inc.
BDW83B-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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