BDV65B
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- Mfr.Part #
- BDV65B
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 12A TO218
- Stock
- 3,842
- In Stock ：
- 3,842
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 100V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Published :
- 2002
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 3
- Surface Mount :
- No
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Elements :
- 1
- Power Dissipation :
- 125W
- Packaging :
- Tube
- hFE Min :
- 1000
- Package / Case :
- TO-247-3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 125W
- Lead Free :
- Lead Free
- Current Rating :
- 10A
- Collector Emitter Saturation Voltage :
- 2V
- Max Collector Current :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity :
- NPN
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- BDV65B
NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV65BG Overview
This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
BDV65BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
BDV65BG Applications
There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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