BD649-S

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Mfr.Part #
BD649-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220
Stock
43,487
In Stock :
43,487

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Power Dissipation :
62.5W
Published :
1993
Max Power Dissipation :
2W
JESD-609 Code :
e1
Number of Pins :
3
Number of Elements :
1
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
100V
Max Collector Current :
8A
Collector Emitter Voltage (VCEO) :
100V
Package / Case :
TO-220-3
Number of Terminations :
3
Terminal Finish :
TIN SILVER COPPER
Collector Base Voltage (VCBO) :
120V
hFE Min :
750
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
Collector Emitter Saturation Voltage :
2V
Power - Max :
2W
Height :
9.3mm
Operating Temperature :
-65°C~150°C TJ
Width :
4.7mm
Transistor Type :
NPN - Darlington
Length :
10.4mm
Polarity :
NPN
Base Part Number :
BD649
Mount :
Through Hole
Packaging :
Tube
Pin Count :
3
Case Connection :
COLLECTOR
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
500μA
Mounting Type :
Through Hole
ECCN Code :
EAR99
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD649-S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Base Part Number:BD649, Mounting Type:Through Hole, BD649-S pinout, BD649-S datasheet PDF, BD649-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD649-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD649-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD649-S Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.The maximum collector current is 8A volts.

BD649-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V


BD649-S Applications


There are a lot of Bourns Inc.
BD649-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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