BD647-S

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Mfr.Part #
BD647-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 8A TO220
Stock
7,351
In Stock :
7,351

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
8A
Pin Count :
3
Collector Base Voltage (VCBO) :
100V
Mount :
Through Hole
Polarity :
NPN
JESD-30 Code :
R-PSFM-T3
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
500μA
Collector Emitter Saturation Voltage :
2V
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Emitter Base Voltage (VEBO) :
5V
Base Part Number :
BD647
Package / Case :
TO-220-3
Pbfree Code :
yes
Power - Max :
2W
Collector Emitter Breakdown Voltage :
80V
Packaging :
Tube
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
80V
JEDEC-95 Code :
TO-220AB
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
2W
Case Connection :
COLLECTOR
Operating Temperature :
-65°C~150°C TJ
Transistor Type :
NPN - Darlington
Published :
1993
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Number of Terminations :
3
Datasheets
BD647-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD647-S from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD647, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, BD647-S pinout, BD647-S datasheet PDF, BD647-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD647-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD647-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD647-S Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 50mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 8A volts is possible.

BD647-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V


BD647-S Applications


There are a lot of Bourns Inc.
BD647-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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