BD648-S

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Mfr.Part #
BD648-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 80V 8A TO220
Stock
16,566
In Stock :
16,566

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
8A
Collector Emitter Saturation Voltage :
2V
Operating Temperature :
-65°C~150°C TJ
Polarity :
PNP
Max Operating Temperature :
150°C
Mount :
Through Hole
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Collector Emitter Breakdown Voltage :
80V
Number of Elements :
1
Min Operating Temperature :
-65°C
Current :
8A
Max Power Dissipation :
2W
Emitter Base Voltage (VEBO) :
5V
Current - Collector Cutoff (Max) :
500μA
Packaging :
Tube
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
100V
Current - Collector (Ic) (Max) :
8A
Collector Emitter Voltage (VCEO) :
80V
Base Part Number :
BD648
Published :
1993
Supplier Device Package :
TO-220
Element Configuration :
Single
Transistor Type :
PNP - Darlington
Voltage :
80V
Power - Max :
2W
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
Datasheets
BD648-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD648-S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BD648, Voltage:80V, BD648-S pinout, BD648-S datasheet PDF, BD648-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD648-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD648-S


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole

BD648-S Overview


In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 50mA, 5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package TO-220 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 8A volts.

BD648-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of TO-220


BD648-S Applications


There are a lot of Bourns Inc.
BD648-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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