BD645-S

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Mfr.Part #
BD645-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 8A TO220
Stock
29,780
In Stock :
29,780

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
500μA
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Number of Elements :
1
Base Part Number :
BD645
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
Collector Base Voltage (VCBO) :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Mounting Type :
Through Hole
Radiation Hardening :
No
Max Collector Current :
8A
Transistor Type :
NPN - Darlington
Collector Emitter Voltage (VCEO) :
60V
Collector Emitter Saturation Voltage :
2V
JESD-30 Code :
R-PSFM-T3
Max Power Dissipation :
2W
Polarity :
NPN
Pin Count :
3
JEDEC-95 Code :
TO-220AB
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
5V
Published :
1993
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
60V
Number of Terminations :
3
Element Configuration :
Single
Mount :
Through Hole
Power - Max :
2W
ECCN Code :
EAR99
Operating Temperature :
-65°C~150°C TJ
Datasheets
BD645-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD645-S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:BD645, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, BD645-S pinout, BD645-S datasheet PDF, BD645-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD645-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD645-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD645-S Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 50mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 8A volts is possible.

BD645-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V


BD645-S Applications


There are a lot of Bourns Inc.
BD645-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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