BD645-S

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Mfr.Part #
BD645-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 8A TO220
Stock
29,780
In Stock :
29,780

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
500μA
ECCN Code :
EAR99
Power - Max :
2W
Package / Case :
TO-220-3
Pin Count :
3
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Max Collector Current :
8A
Number of Terminations :
3
Case Connection :
COLLECTOR
Packaging :
Tube
Operating Temperature :
-65°C~150°C TJ
Radiation Hardening :
No
Max Power Dissipation :
2W
Polarity :
NPN
JEDEC-95 Code :
TO-220AB
Element Configuration :
Single
Base Part Number :
BD645
Mount :
Through Hole
Collector Base Voltage (VCBO) :
80V
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
60V
Collector Emitter Saturation Voltage :
2V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
JESD-30 Code :
R-PSFM-T3
Emitter Base Voltage (VEBO) :
5V
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
60V
Published :
1993
Datasheets
BD645-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD645-S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Base Part Number:BD645, BD645-S pinout, BD645-S datasheet PDF, BD645-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD645-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD645-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD645-S Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 50mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 8A volts is possible.

BD645-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V


BD645-S Applications


There are a lot of Bourns Inc.
BD645-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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