BC849CW
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- Mfr.Part #
- BC849CW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 22,267
- In Stock ：
- 22,267
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- hFE Min :
- 420
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Length :
- 2.2mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 30V
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- VCEsat-Max :
- 0.6 V
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 30V
- Height :
- 1mm
- Transistor Application :
- AMPLIFIER
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.35mm
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- 600mV
- Base Part Number :
- BC849
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Published :
- 2009
- Datasheets
- BC849CW
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849CW,115 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849CW,115 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849CW,115 Applications
There are a lot of Nexperia USA Inc.
BC849CW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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