BC849CLT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

30V

Collector Base Voltage (VCBO) :

30V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Gain Bandwidth Product :

100MHz

Element Configuration :

Single

Current Rating :

100mA

Surface Mount :

yes

Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Voltage - Rated DC :

30V

Max Collector Current :

100mA

ECCN Code :

EAR99

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

600mV

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

15nA ICBO

Factory Lead Time :

4 Weeks

Frequency :

100MHz

Max Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

30V

hFE Min :

420

Length :

2.9mm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Number of Pins :

3

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

3

Lead Free :

Lead Free

Manufacturer Package Identifier :

SOT−23 (TO−236) CASE 318−08 ISSUE AR

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

940μm

REACH SVHC :

No SVHC

Width :

1.3mm

Published :

2005

Collector Emitter Breakdown Voltage :

30V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

100MHz