BC849BW,115
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- Mfr.Part #
- BC849BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC849BW - SMALL SIG
- Stock
- 2,676
- In Stock ：
- 2,676
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BC849
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Published :
- 2001
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 30V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- VCEsat-Max :
- 0.6 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Datasheets
- BC849BW,115
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849BW,115 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849BW,115 Applications
There are a lot of Nexperia USA Inc.
BC849BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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